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2N5551,412
2N5551,412
GP BJT 2N5551,412
NXP
2N5551,412
--
Diodes, Transistors and Thyristors
GP BJT
2N5551,412.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Minimum DC Current Gain80@1mA@5V|80@10mA@5V|30@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)630
Maximum DC Collector Current (A)0.3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)160
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA
Description
Trans GP BJT NPN 160V 0.3A 630mW 3-Pin TO-92 Bulk
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