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2N5551HR
2N5551HR
GP BJT 2N5551HR
STMicroelectronics
2N5551HR
--
Diodes, Transistors and Thyristors
GP BJT
2N5551HR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
Diameter5.8(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingStrip
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Height5.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-18
Standard Package NameTO-206-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain80@1mA@5V|80@10mA@5V|30@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)160
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA
Description
Trans GP BJT NPN 160V 0.6A 3-Pin TO-18 Strip
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