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2N5655G
2N5655G
GP BJT 2N5655G
onsemi
2N5655G
--
Diodes, Transistors and Thyristors
GP BJT
2N5655G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain15@250mA@10V|5@500mA@10V|25@50mA@10V|30@100mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)275
Maximum Transition Frequency (MHz)10(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Collector-Emitter Saturation Voltage (V)1@10mA@100mA|2.5@25mA@250mA|10@100mA@500mA
Description
Trans GP BJT NPN 250V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box
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