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2N5682E3
2N5682E3
GP BJT 2N5682E3
Microchip Technology
2N5682E3
--
Diodes, Transistors and Thyristors
GP BJT
2N5682E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSCompliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Minimum DC Current Gain40@0.25A@2V|20@500mA@2V|5@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)120
Maximum Base Emitter Saturation Voltage (V)1.1@25mA@250mA|1.3@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@25mA@250mA|1@50mA@500mA
Description
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-39
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