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2N5794U
2N5794U
GP BJT 2N5794U
Microchip Technology
2N5794U
--
Diodes, Transistors and Thyristors
GP BJT
2N5794U.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingBag
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Width6.35(Max)
Package Height2.92(Max)
Package Length4.45(Max)
Product CategoryBipolar Power
Supplier PackageCase U
Standard Package NameModule
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@300mA@10V|50@150mA@1V
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|1.8@30mA@300mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|0.9@30mA@300mA
Description
Trans GP BJT NPN 40V 0.6A 600mW 6-Pin Case U Bag
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