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2N5886G
2N5886G
GP BJT 2N5886G
onsemi
2N5886G
--
Diodes, Transistors and Thyristors
GP BJT
2N5886G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain35@3A@4V|20@10A@4V|4@25A@4V
Maximum Base Current (A)7.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)25
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)4(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)1000000
Maximum Base Emitter Saturation Voltage (V)2.5@6.25A@25A
Maximum Collector-Emitter Saturation Voltage (V)1@1.5A@15A|4@6.25A@25A
Description
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
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