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2N5955
2N5955
GP BJT 2N5955
Microchip Technology
2N5955
--
Diodes, Transistors and Thyristors
GP BJT
2N5955.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain20@2.5A@4V|5@6A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)4000
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)70
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)1@0.25mA@2.5mA
Description
Trans GP BJT PNP 60V 6A 3-Pin(2+Tab) TO-66
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