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2N6338G
2N6338G
GP BJT 2N6338G
onsemi
2N6338G
--
Diodes, Transistors and Thyristors
GP BJT
2N6338G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain50@0.5A@2V|30@10A@2V|12@25A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)25
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)40(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)1.8@1A@10A|2.5@2.5A@25A
Maximum Collector-Emitter Saturation Voltage (V)1@1A@10A|1.8@2.5A@25A
Description
Trans GP BJT NPN 100V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
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