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2N6422
2N6422
GP BJT 2N6422
Microchip Technology
2N6422
--
Diodes, Transistors and Thyristors
GP BJT
2N6422.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain8@1mA
Number of Elements per Chip1
Maximum Power Dissipation (mW)35000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)450
Maximum Collector-Emitter Voltage (V)300
Maximum Collector-Emitter Saturation Voltage (V)0.75@0.125mA@1mA
Description
Trans GP BJT PNP 300V 2A 35000mW 3-Pin(2+Tab) TO-66
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