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2N708
2N708
GP BJT 2N708
Microchip Technology
2N708
--
Diodes, Transistors and Thyristors
GP BJT
2N708.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height5.33(Max)
Product CategoryBipolar Power
Supplier PackageTO-18
Standard Package NameTO-206-AA
Minimum DC Current Gain15@0.5mA@1V|40@10mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|0.72@0.1mA@1mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@1mA@10mA
Description
Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
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