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2N7373
2N7373
GP BJT 2N7373
Microchip Technology
2N7373
--
Diodes, Transistors and Thyristors
GP BJT
2N7373.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
ConfigurationSingle
Package Width6.6
Package Height20.19(Max) - 6.48
Package Length13.72
Product CategoryBipolar Power
Supplier PackageTO-254
Standard Package NameTO
Number of Elements per Chip1
Maximum Power Dissipation (mW)4000
Maximum DC Collector Current (A)5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.75@0.25mA@2.5mA
Description
Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-254
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