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2PD2150,115
2PD2150,115
GP BJT 2PD2150,115
Nexperia
2PD2150,115
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Diodes, Transistors and Thyristors
GP BJT
2PD2150,115.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
TabTab
PPAPUnknown
SVHCYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Product CategoryBipolar Power
Supplier PackageSOT-89
Minimum DC Current Gain180@0.1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)220(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)20
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.1A@2A
Description
Trans GP BJT NPN 20V 3A 2000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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