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2SA1434-TB-E
2SA1434-TB-E
GP BJT 2SA1434-TB-E
onsemi
2SA1434-TB-E
--
Diodes, Transistors and Thyristors
GP BJT
2SA1434-TB-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.5
Package Height1.1
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageCP
Minimum DC Current Gain500@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)15
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.1@1mA@10uA
Maximum Collector-Emitter Saturation Voltage (V)0.5@1mA@50mA
Description
Trans GP BJT PNP 50V 0.1A 200mW 3-Pin CP
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