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2SA1480E
2SA1480E
GP BJT 2SA1480E
onsemi
2SA1480E
--
Diodes, Transistors and Thyristors
GP BJT
2SA1480E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.3
Package Height11
Package Length8
Product CategoryBipolar Power
Supplier PackageTO-126ML
Standard Package NameTO-225-AA
Minimum DC Current Gain100@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@2mA@20mA
Description
Trans GP BJT PNP 300V 0.1A 1500mW 3-Pin TO-126ML
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