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2SA1593S-TL-E
2SA1593S-TL-E
GP BJT 2SA1593S-TL-E
onsemi
2SA1593S-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width5.5
Package Height2.3
Package Length6.5
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.6@100mA@1A
Description
Trans GP BJT PNP 100V 2A 1000mW 3-Pin(2+Tab) DPAK T/R
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