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2SA1708T-AN
2SA1708T-AN
GP BJT 2SA1708T-AN
onsemi
2SA1708T-AN
--
Diodes, Transistors and Thyristors
GP BJT
2SA1708T-AN.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.5
Package Height4.5
Package Length6.9
Product CategoryBipolar Power
Supplier PackageNMP
Minimum DC Current Gain200@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.2@40mA@400mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@40mA@400mA
Description
Trans GP BJT PNP 100V 1A 1000mW 3-Pin NMP T/R
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