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2SA1740E-TD-E
2SA1740E-TD-E
GP BJT 2SA1740E-TD-E
onsemi
2SA1740E-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@50mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)70(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)400
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.8@5mA@50mA
Description
Trans GP BJT PNP 400V 0.2A 1300mW 4-Pin(3+Tab) SOT-89
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