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2SA1786E-AN
2SA1786E-AN
GP BJT 2SA1786E-AN
onsemi
2SA1786E-AN
--
Diodes, Transistors and Thyristors
GP BJT
2SA1786E-AN.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.5
Package Height4.5
Package Length6.9
Product CategoryBipolar Power
Supplier PackageNMP
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@100mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)40(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)400
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)1@50mA@500mA
Description
Trans GP BJT PNP 400V 2A 1000mW 3-Pin NMP
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