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2SA2013-TD-E
2SA2013-TD-E
GP BJT 2SA2013-TD-E
onsemi
2SA2013-TD-E
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Diodes, Transistors and Thyristors
GP BJT
2SA2013-TD-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.18@50mA@1A|0.34@100mA@2A
Description
Trans GP BJT PNP 50V 4A 1300mW 4-Pin(3+Tab) SOT-89 T/R
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