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2SA2112-AN
2SA2112-AN
GP BJT 2SA2112-AN
onsemi
2SA2112-AN
--
Diodes, Transistors and Thyristors
GP BJT
2SA2112-AN.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.5
Package Height4.5
Package Length6.9
Product CategoryBipolar Power
Supplier PackageNMP
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)390(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.27@50mA@1A|0.7@100mA@2A
Description
Trans GP BJT PNP 50V 3A 1000mW 3-Pin NMP T/R
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