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2SB1124S-TD-E
2SB1124S-TD-E
GP BJT 2SB1124S-TD-E
onsemi
2SB1124S-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Small Signal
Supplier PackageSOT-89
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.7@100mA@2A
Description
Trans GP BJT PNP 50V 3A 500mW 4-Pin(3+Tab) SOT-89 T/R
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