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2SB1144S
2SB1144S
GP BJT 2SB1144S
onsemi
2SB1144S
--
Diodes, Transistors and Thyristors
GP BJT
2SB1144S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.3
Package Height11
Package Length8
Product CategoryBipolar Power
Supplier PackageTO-126ML
Standard Package NameTO-225-AA
Minimum DC Current Gain140@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 100V 1.5A 1500mW 3-Pin TO-126ML
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