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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2SB1216S-TL-E
2SB1216S-TL-E
GP BJT 2SB1216S-TL-E
onsemi
2SB1216S-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
2SB1216S-TL-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width5.5
Package Height2.3
Package Length6.5
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@0.5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)180(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.2@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT PNP 100V 4A 1000mW 3-Pin(2+Tab) DPAK T/R
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