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2SB1216T-TL-H
2SB1216T-TL-H
GP BJT 2SB1216T-TL-H
onsemi
2SB1216T-TL-H
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width5.5
Package Height2.3
Package Length6.5
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@0.5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.2@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT PNP 100V 4A 1000mW 3-Pin(2+Tab) DPAK T/R
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