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2SB817C-1E
2SB817C-1E
GP BJT 2SB817C-1E
onsemi
2SB817C-1E
--
Diodes, Transistors and Thyristors
GP BJT
2SB817C-1E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.8
Package Length15.6
Product CategoryBipolar Power
Supplier PackageTO-3P
Standard Package NameTO-3P
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@1A@5V|35@5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Maximum DC Collector Current (A)12
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)10(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)140
Maximum Collector Cut-Off Current (nA)100000
Maximum Collector-Emitter Saturation Voltage (V)2@0.5A@5A
Description
Trans GP BJT PNP 140V 12A 2500mW 3-Pin(3+Tab) TO-3P Tube
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