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2SC3649S-TD-E
2SC3649S-TD-E
GP BJT 2SC3649S-TD-E
onsemi
2SC3649S-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)160
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.45@50mA@500mA
Description
Trans GP BJT NPN 160V 1.5A 1500mW 4-Pin(3+Tab) SOT-89 T/R
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