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2SC4159E
2SC4159E
GP BJT 2SC4159E
onsemi
2SC4159E
--
Diodes, Transistors and Thyristors
GP BJT
2SC4159E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.5
Package Height16
Package Length10
Product CategoryBipolar Power
Supplier PackageTO-220ML
Minimum DC Current Gain100@300mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Maximum Collector-Emitter Voltage (V)160
Maximum Collector-Emitter Saturation Voltage (V)0.3(Typ)@50mA@500mA
Description
Trans GP BJT NPN 160V 0.5A 15000mW 3-Pin(3+Tab) TO-220ML
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