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2SC4548E-TD-E
2SC4548E-TD-E
GP BJT 2SC4548E-TD-E
onsemi
2SC4548E-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
Part StatusUnconfirmed
ConfigurationSingle
Product CategoryBipolar Power
Minimum DC Current Gain100@50mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)70(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)400
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@5mA@50mA
Description
Trans GP BJT NPN 400V 0.2A 1300mW 4-Pin(3+Tab) SOT-89
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