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2SC4645E-AN
2SC4645E-AN
GP BJT 2SC4645E-AN
onsemi
2SC4645E-AN
--
Diodes, Transistors and Thyristors
GP BJT
2SC4645E-AN.pdf
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSSupplier Unconfirmed
MaterialSi
ECCN (US)EAR99
Part StatusUnconfirmed
ConfigurationSingle
Product CategoryBipolar Power
Minimum DC Current Gain100@100mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)70(Typ)
Maximum Operating Temperature (°C)150
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1@20mA@200mA
Maximum Collector-Emitter Saturation Voltage (V)1@20mA@200mA
Description
Trans GP BJT NPN 400V 1A 1000mW 3-Pin NMP
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