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2SC536NG-NPA-AT
2SC536NG-NPA-AT
GP BJT 2SC536NG-NPA-AT
onsemi
2SC536NG-NPA-AT
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.5
Package Height4.5
Package Length4.5
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain280@1mA@6V|70@0.1mA@6V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)200(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@10mA@100mA
Description
Trans GP BJT NPN 50V 0.15A 500mW 3-Pin TO-92 T/R
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