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2SC5706-P-E
2SC5706-P-E
GP BJT 2SC5706-P-E
onsemi
2SC5706-P-E
--
Diodes, Transistors and Thyristors
GP BJT
2SC5706-P-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.3
Package Height5.5
Package Length6.5
Product CategoryBipolar Power
Supplier PackageTP
Standard Package NameTO-251
Minimum DC Current Gain200@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)400(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.135@50mA@1A|0.24@100mA@2A
Description
Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) TP
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