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2SC5706-TL-H
2SC5706-TL-H
GP BJT 2SC5706-TL-H
onsemi
2SC5706-TL-H
--
Diodes, Transistors and Thyristors
GP BJT
2SC5706-TL-H.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusNRND
ConfigurationSingle
Package Width5.5
Package Height2.3
Package Length6.5
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
Minimum DC Current Gain200@500mA@2V
Maximum Base Current (A)1.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)400(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.135@50mA@1A|0.24@100mA@2A
Description
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
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