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GP BJT 2SC6082-EPN-1E
onsemi
2SC6082-EPN-1E
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Obsolete |
| Configuration | Single |
| Product Category | Bipolar Power |
| Minimum DC Current Gain | 50@10A@2V|200@330mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 15 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 195(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@375mA@7.5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@375mA@7.5A |
| Description |
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