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2SD1047E
2SD1047E
GP BJT 2SD1047E
onsemi
2SD1047E
--
Diodes, Transistors and Thyristors
GP BJT
2SD1047E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.8
Package Height14.1
Package Length15.6
Product CategoryBipolar Power
Supplier PackageTO-3PB
Minimum DC Current Gain100@1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)100000
Maximum DC Collector Current (A)12
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)15(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)140
Maximum Collector-Emitter Saturation Voltage (V)2.5@0.5A@5A
Description
Trans GP BJT NPN 140V 12A 100000mW 3-Pin(3+Tab) TO-3PB
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