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2SD1060S-1E
2SD1060S-1E
GP BJT 2SD1060S-1E
onsemi
2SD1060S-1E
--
Diodes, Transistors and Thyristors
GP BJT
2SD1060S-1E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length10
Product CategoryBipolar Power
Supplier PackageTO-220
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)17500
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)30(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)100000
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.3A@3A
Description
Trans GP BJT NPN 50V 5A 17500mW 3-Pin(3+Tab) TO-220 Tube
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