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2SD1803T-E
2SD1803T-E
GP BJT 2SD1803T-E
onsemi
2SD1803T-E
--
Diodes, Transistors and Thyristors
GP BJT
2SD1803T-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.3
Package Height5.5
Package Length6.5
Product CategoryBipolar Power
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@0.5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)180(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.3@0.15A@3A
Maximum Collector-Emitter Saturation Voltage (V)0.4@0.15A@3A
Description
Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag
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