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2SD1835S
2SD1835S
GP BJT 2SD1835S
onsemi
2SD1835S
--
Diodes, Transistors and Thyristors
GP BJT
2SD1835S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4
Package Height5
Package Length5
Product CategoryBipolar Power
Supplier PackageNP
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.4@50mA@1A
Description
Trans GP BJT NPN 50V 2A 750mW 3-Pin NP Bag
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