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2ST5949
2ST5949
GP BJT 2ST5949
STMicroelectronics
2ST5949
--
Diodes, Transistors and Thyristors
GP BJT
2ST5949.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.2(Max)
Package Height8.7(Max)
Package Length39.5(Max)
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain35@7A@5V|80@1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Maximum DC Collector Current (A)17
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Transition Frequency (MHz)25(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Collector-Emitter Saturation Voltage (V)3@0.8A@8A
Description
Trans GP BJT NPN 250V 17A 250000mW 3-Pin(2+Tab) TO-3 Bag
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