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GP BJT 2STL2580-AP
STMicroelectronics
2STL2580-AP
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Loose |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 5.1(Max) |
| Package Height | 8.8(Max) |
| Package Length | 6.2(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-92 Mod |
| Standard Package Name | TO-92 |
| Minimum DC Current Gain | 60@250mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1500 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 400 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@0.2A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@0.2A@1A |
| Description |
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