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30C02MH-TL-E
30C02MH-TL-E
GP BJT 30C02MH-TL-E
onsemi
30C02MH-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
30C02MH-TL-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.6
Package Height0.88(Max)
Package Length2
Product CategoryBipolar Small Signal
Supplier PackageMCPH
Standard Package NameSOT
Minimum DC Current Gain300@50mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.7
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)540(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@200mA
Maximum Collector-Emitter Saturation Voltage (V)0.19@10mA@200mA
Description
Trans GP BJT NPN 30V 0.7A 600mW 3-Pin MCPH T/R
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