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BC639
BC639
GP BJT BC639
onsemi
BC639
--
Diodes, Transistors and Thyristors
GP BJT
BC639.pdf
Specification
Product AttributeAttribute Value
HTS8542.31.00.01
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@5mA@2V|25@500mA@2V|40@150mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 100V 1A 1000mW 3-Pin TO-92 Box
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