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BC639-16,126
BC639-16,126
GP BJT BC639-16,126
NXP
BC639-16,126
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Diodes, Transistors and Thyristors
GP BJT
BC639-16,126.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Minimum DC Current Gain100@150mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)180(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 830mW 3-Pin TO-92 Ammo
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