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BC856BM3T5G
BC856BM3T5G
GP BJT BC856BM3T5G
onsemi
BC856BM3T5G
--
Diodes, Transistors and Thyristors
GP BJT
BC856BM3T5G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.5
Package Length1.2
Product CategoryBipolar Small Signal
Supplier PackageSOT-723
Standard Package NameSOT
Minimum DC Current Gain220@2mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)640
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)65
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.5mA@10mA|0.65@5mA@100mA
Description
Trans GP BJT PNP 65V 0.1A 640mW 3-Pin SOT-723 T/R
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