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BC856BQBZ
BC856BQBZ
GP BJT BC856BQBZ
Nexperia
BC856BQBZ
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Diodes, Transistors and Thyristors
GP BJT
BC856BQBZ.pdf
Specification
Product AttributeAttribute Value
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1
Package Height0.45
Package Length1.1
Product CategoryBipolar Small Signal
Supplier PackageDFN-D
Minimum DC Current Gain220@2mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)420
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)65
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.5mA@10mA|0.65@5mA@100mA
Description
Trans GP BJT PNP 65V 0.1A 420mW 3-Pin DFN-D
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