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BC857CQC-QZ
BC857CQC-QZ
GP BJT BC857CQC-QZ
Nexperia
BC857CQC-QZ
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Diodes, Transistors and Thyristors
GP BJT
BC857CQC-QZ.pdf
Specification
Product AttributeAttribute Value
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.2
Package Height0.46(Max)
Package Length1.4
Product CategoryBipolar Small Signal
Supplier PackageDFN-D
Minimum DC Current Gain420@2mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)450
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)45
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.5mA@10mA|0.65@5mA@100mA
Description
Trans GP BJT PNP 45V 0.1A 450mW 3-Pin DFN-D
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