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BC859CLT1
BC859CLT1
GP BJT BC859CLT1
onsemi
BC859CLT1
--
Diodes, Transistors and Thyristors
GP BJT
BC859CLT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain420@2mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.65@5mA@100mA|0.3@0.5mA@10mA
Description
Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R
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