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BCM857QASZ
BCM857QASZ
GP BJT BCM857QASZ
Nexperia
BCM857QASZ
--
Diodes, Transistors and Thyristors
GP BJT
BCM857QASZ.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
ConfigurationDual
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategoryBipolar Small Signal
Supplier PackageDFN-B EP
Minimum DC Current Gain200@2mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)350
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)175(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.76(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@0.5mA@10mA|0.4@5mA@100mA
Description
Trans GP BJT PNP 45V 0.1A 350mW Automotive 6-Pin DFN-B EP T/R
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