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BCP56-10T1G
BCP56-10T1G
GP BJT BCP56-10T1G
onsemi
BCP56-10T1G
--
Diodes, Transistors and Thyristors
GP BJT
BCP56-10T1G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
Minimum DC Current Gain25@5mA@2V|63@150mA@2V|25@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)130(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R
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