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BCP5610TA
BCP5610TA
GP BJT BCP5610TA
Diodes Incorporated
BCP5610TA
--
Diodes, Transistors and Thyristors
GP BJT
BCP5610TA.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.55
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Minimum DC Current Gain25@5mA@2V|40@150mA@2V|25@500mA@2V|63@150mA@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)150(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
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