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BCW32LT1G
BCW32LT1G
GP BJT BCW32LT1G
onsemi
BCW32LT1G
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Diodes, Transistors and Thyristors
GP BJT
BCW32LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain200@2mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)32
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)32
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.5mA@10mA
Description
Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R
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